symbol v ds v gs i dm i ar e ar t j , t stg symbol ty p max 21 25 48 60 r jc 1 1.5 c mj w 50 w repetitive avalanche energy l=0.3mh c 145 power dissipation a i d avalanche current c 30 t a =25c p dsm 2.1 power dissipation b continuous drain current g t a =25c i dsm 17 t a =70c 13 85 70 a 200 a 100 t c =100c continuous drain current b maximum units parameter t c =25c g t c =100c b 30 c/w absolute maximum ratings t a =25c unless otherwise noted v v 12 pulsed drain current gate-source voltage drain-source voltage t c =25c p d maximum junction-to-case c steady-state t a =70c 1.3 junction and storage temperature range -55 to 175 c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state aol1400 n-channel enhancement mode field effect transistor features v ds (v) = 30v i d = 85a (v gs = 10v) r ds(on) < 4.5m ? (v gs = 10v) r ds(on) < 5.5m ? (v gs = 4.5v) general description the aol1400 uses advanced trench technology to provide excellent r ds(on) , shoot-through immunity and good body diode characteristics. this device is ideally suited for use as a low side switch in cpu core power conversion. standard product aol1400 is pb-free (meets rohs & sony 259 specifications). AOL1400L is a green product ordering option. aol1400 and a ol1400l are electrically identical. g d s ultra so-8 tm to p view bottom tab connected to drain fits soic8 footprint ! s g d alpha & omega semiconductor, ltd.
aol1400 symbol min typ max units bv dss 30 v 0.005 1 t j =55c 5 i gss 100 na v gs(th) 0.6 1.1 1.8 v i d(on) 100 a 3.9 4.5 t j =125c 56 4.6 5.5 m q g (4.5v) 72.4 85 nc q gs 13.4 nc q gd 16.8 nc t d(on) 14.7 22 ns t r 14.2 21 ns t d(off) 105.5 150 ns t f 23.5 35 ns t rr 30.5 40 ns q rr 21 33 nc 62 this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice body diode reverse recovery time body diode reverse recovery charge i f =20a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =4.5v, v ds =5v v gs =10v, i d =20a reverse transfer capacitance i f =20a, di/dt=100a/ s electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =250 a v ds =24v, v gs =0v v ds =0v, v gs = 12v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage maximum body-diode continuous current input capacitance output capacitance dynamic parameters m v gs =4.5v, i d =20a i s =1a,v gs =0v v ds =5v, i d =20a turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.75 , r gen =3 turn-off fall time turn-on delaytime gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz v gs =4.5v, v ds =15v, i d =20a a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150c. the value in any given application depends on the user's specific board design, and the maximum temperature of 175c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c: repetitive rating, pulse width limited by junction temperature t j(max) =175c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =175c. g. the maximum current rating is limited by bond-wires. h. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. rev 1: dec 2005 alpha & omega semiconductor, ltd.
aol1400 typical electrical and thermal characteristics 0 20 40 60 80 100 012345 v ds (volts) figure 1: on-region characteristics i d (a) v gs =2v 2.5v 10v 3.0v 4.5v 0 10 20 30 40 50 60 0 0.5 1 1.5 2 2.5 v gs (volts) figure 2: transfer characteristics i d (a) 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 20406080100 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5 0 2 4 6 8 10 12 0246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c i d =20a alpha & omega semiconductor, ltd.
aol1400 typical electrical and thermal characteristic s 0 1 2 3 4 5 0 20406080 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 2000 4000 6000 8000 10000 12000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance c oss c rss v ds =15v i d =20a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r jc =1.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 0 200 400 600 800 1000 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to - case (note b) power (w) t j(max) =175c t a =25c 0.1 1 10 100 1000 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 s 100 s 10ms 1ms dc r ds(on) limited t j(max) =175c, t a =25c alpha & omega semiconductor, ltd.
aol1400 typical electrical and thermal characteristics 0 20 40 60 80 100 0.00001 0.0001 0.001 0.01 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) t a =25c 0 20 40 60 80 100 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating i d (a) 0 20 40 60 80 100 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: single pulse power rating junction-to - ambient (note h) power (w) 0.001 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note h) z ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =60c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p d single pulse alpha & omega semiconductor, ltd.
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